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New record was made for performance of GaN LEDs on silicon substrate
by , 08-11-2011 at 12:47 AM (724 Views)
Recently an LED lighting technology company announced that it set a new record for performance and manufacturability of GaN LEDs on silicon substrate, which will reduce the manufacture cost of LED chip and LED module. The new technology makes it possible to grow crack-free GaN layer on 8-inch silicon wafers, no matter what the room temperature is.
Bridgelux, the company owning the proprietary of the new technology, has demonstrated that the new LEDs could give as good performance as existing state-of-the-art sapphire-based LEDs. Cool white LEDs showed efficiencies as high as 160 Lm/W at a CCT of 4350K. Warm white LEDs constructed from the GaN on Si chips delivered 125 Lm/W at a color temperature of 2940K and CRI of 80.
More information at: LED Module,LED Sign_Imigy Lighting Co.,Ltd
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